InGaN-based nanowires development for energy harvesting and conversion applications
نویسندگان
چکیده
This Tutorial teaches the essential development of nitrogen-plasma-assisted molecular-beam-epitaxy grown InGaN nanowires as an application-inspired platform for energy harvesting and conversion applications by growing dislocation- strain-relieved axial InGaN-based nanowires. The aims to shed light on interfacial, surface, electrical, photoelectrochemical characteristics through nanoscale ultrafast characterizations. Understanding interrelated optical-physical properties proved critical in renewable-energy devices. Benefiting from their unique aspect ratio surface-to-volume ratio, semiconductor properties, piezoelectric group-III-nitride nanowires, especially are promising clean applications, including piezotronic/piezo-phototronic solar-to-clean-fuel energy-conversion.
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2021
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0035685